mixers - double-balanced - chip 4 4 - 20 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com parameter if = 100 mhz lo = 20 dbm units min. typ. max. min. typ. max. frequency range, rf & lo 6 - 16 16 - 18 ghz frequency range, if dc - 6 dc - 6 ghz conversion loss 9 11 10 12 db noise figure (ssb) 9 11 10 12 db lo to rf isolation 33 28 db lo to if isolation 20 30 13 20 db ip3 (input) 22 22 dbm ip2 (input) 40 42 dbm 1 db compression (input) 15 15 dbm * unless otherwise noted, all measurements performed as downconverter, if= 100 mhz. gaas mmic double-balanced mixer, 6 - 18 ghz v03.1007 general description features functional diagram input ip3: +21 dbm lo / rf isolation: 25 to 40 db if bandwidth: dc to 6 ghz small size: 1.48 x 1.48 x 0.1 mm (hmc141) small size: 1.52 x 1.52 x 0.1 mm (hmc142) electrical speci cations, t a = +25 c, lo drive = +20 dbm typical applications the hmc141 & hmc142 is ideal for: ? unii & hiperlan ? microwave & mmw radios ? military, space & test equipment the hmc141 chip is a minature double-balanced mixer which can be used as an upconverter or down- converter. the hmc142 is identical to the hmc141 except that the layout is a mirror image designed to ease integration into image-reject mixer modules. broadband operation and excellent isolations are pro- vided by on-chip baluns, which require no external components and no dc bias. the design is similar to the hmc143/144 mixers but without an if com- biner, providing a broad dc to 6 ghz if bandwidth. these devices are much smaller and more reliable than hybrid diode mixers for vsat and point-to-point radios. hmc141 / hmc142
mixers - double-balanced - chip 4 4 - 21 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com conversion gain vs. temperature @ lo = +20 dbm isolation @ lo = +20 dbm if bandwidth @ lo = +20 dbm return loss @ lo = +20 dbm conversion gain vs. lo drive upconverter performance conversion gain @ lo = +20 dbm -20 -15 -10 -5 0 5 8 11 14 17 20 +25c +85c -55c conversion gain (db) frequency (ghz) -50 -40 -30 -20 -10 0 5 8 11 14 17 20 rf to if lo to rf lo to if isolation (db) frequency (ghz) -20 -15 -10 -5 0 5 8 11 14 17 20 lo = +13 dbm lo = +15 dbm lo = +17 dbm lo = +20 dbm conversion gain (db) frequency (ghz) -25 -20 -15 -10 -5 0 5 8 11 14 17 20 rf return loss lo return loss return loss (db) frequency (ghz) -20 -15 -10 -5 0 0123456789 if bandwidth if return loss response (db) frequency (ghz) -20 -15 -10 -5 0 5 8 11 14 17 20 conversion gain (db) frequency (ghz) hmc141 / hmc142 v03.1007 gaas mmic double-balanced mixer, 6 - 18 ghz
mixers - double-balanced - chip 4 4 - 22 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com input ip3 vs. lo drive* input p1db vs. temperature @ lo = +20 dbm input ip3 vs. temperature @ lo = +20 dbm* harmonics of lo * two-tone input power = 0 dbm each tone, 1 mhz spacing. input ip2 vs. lo drive * mxn spurious @ if port nlo mrf01234 0xx3 7 3 35 130172532 27264595974 37676717276 4 7476777777 rf = 6 ghz @ -10 dbm lo = 6.1 ghz @ +20 dbm all values in dbc relative to the if power level. measured as downconverter. nlo spur @ rf port lo freq. (ghz) 1 2 3 4 638344439 844294643 10 36 25 46 53 12 33 23 47 xx 14 32 28 xx xx 16 30 27 xx xx 18 27 32 xx xx lo = +20 dbm all values in dbc below input lo level @ rf port. 10 15 20 25 30 5 8 11 14 17 20 lo = +13 dbm lo = +15 dbm lo = +17 dbm lo = +20 dbm ip3 (dbm) frequency (ghz) 10 15 20 25 30 5 8 11 14 17 20 +25c +85c -55c ip3 (dbm) frequency (ghz) 20 30 40 50 60 70 80 5 8 11 14 17 20 lo = +13 dbm lo = +15 dbm lo = +17 dbm lo = +20 dbm ip2 (dbm) frequency (ghz) 10 12 14 16 18 20 6 8 10 12 14 16 18 20 +25c +85c -55c p1db (dbm) frequency (ghz) hmc141 / hmc142 v03.1007 gaas mmic double-balanced mixer, 6 - 18 ghz
mixers - double-balanced - chip 4 4 - 23 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com absolute maximum ratings rf / if input +20 dbm lo drive +27 dbm channel temperature (tc) 150 c thermal resistance 101.7 c/w if dc current 2 ma storage temperature -65 to +150 c operating temperature -55 to +85 c die packaging information [1] standard alternate wp-3 (waffle pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. hmc141 / hmc142 v03.1007 gaas mmic double-balanced mixer, 6 - 18 ghz electrostatic sensitive device observe handling precautions outline drawings (see hmc141/142 operation application note) hmc141 hmc142 notes: 1. all dimensions are in inches [mm]. 2. die thickness is .004. 3. typical bond pad is .004 square. 4. backside metallization: gold. 5. bond pad metallization: gold. 6. backside metal is ground. 7. connection not required for unlabeled bond pads.
mixers - double-balanced - chip 4 4 - 24 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com pad number function description interface schematic 1 (2) rf this pin is ac coupled and matched to 50 ohms. 2 (1) lo this pin is ac coupled and matched to 50 ohms. 3 if this pin is dc coupled. for applications not requiring operation to dc, this port should be dc blocked externally using a series capacitor whose value has been chosen to pass the necessary if frequency range. for operation to dc, this pin must not source/sink more than 2 ma of current or die non-function and possible die failure will result. pad descriptions hmc141 (hmc142) hmc141 / hmc142 v03.1007 gaas mmic double-balanced mixer, 6 - 18 ghz
mixers - double-balanced - chip 4 4 - 25 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc141 / hmc142 v03.1007 gaas mmic double-balanced mixer, 6 - 18 ghz mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. typical die-to-substrate spacing is 0.076mm (3 mils). gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on rf, lo & if ports. handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding rf bonds made with 0.003 x 0.0005 ribbon are recommended. these bonds should be thermosonically bonded with a force of 40-60 grams. dc bonds of 0.001 (0.025 mm) diameter, thermosonically bonded, are recommended. ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. all bonds should be made with a nominal stage temperature of 150 c. a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. all bonds should be as short as possib le, less than 12 mils (0.31 mm). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab
|
